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AOB10B65LN3

Part No AOB10B65LN3
Manufacturer Alpha & Omega Semiconductor Inc.
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Manufacturer Alpha & Omega Semiconductor Inc.
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 817194-AOB10B65LN3
Ultra Librarian 3D Model Ultra Librarian AOB10B65LN3 CAD Model

Description

The AOB10B65LN3 is a 650V N-Channel MOSFET from Alpha & Omega Semiconductor (AOS). This device utilizes AOS's advanced MOSFET technology to achieve high performance and efficiency in power switching applications. It is designed to minimize conduction losses and improve switching performance, making it suitable for various power electronics applications.

Applications:

  • Power Supplies: Used in server, telecom, and desktop power supplies.
  • AC-DC Power Conversion: Employed in AC-DC converters for efficient power conversion.
  • Motor Control: Suitable for motor control applications requiring efficient switching.
  • Solar Inverters: Used in solar inverters for DC-AC conversion.
  • UPS (Uninterruptible Power Supplies): Found in UPS systems to provide backup power.

Features:

  • 650V Breakdown Voltage: Provides a high breakdown voltage for robust operation in high-voltage applications.
  • Low On-Resistance (RDS(on)): Minimizes conduction losses, improving efficiency.
  • Fast Switching Speed: Enables high-frequency operation with minimal switching losses.
  • Avalanche Rated: Designed to withstand avalanche conditions, enhancing reliability.
  • RoHS Compliant: Complies with RoHS standards for environmental friendliness.

Benefits:

  • High Efficiency: Reduces energy consumption in power conversion systems.
  • Improved Reliability: Offers robust performance and long lifespan.
  • Reduced Heat Dissipation: Minimizes heat generation, simplifying thermal management.
  • Compact Design: Enables smaller and lighter power supply designs.
  • Cost-Effective: Provides a balance of performance and cost.

The AOB10B65LN3 is typically packaged in a TO-247, offering excellent thermal performance. Its low gate charge (Qg) contributes to reduced switching losses and improved efficiency. The device's characteristics make it a suitable choice for power electronics designers looking for a high-performance, reliable MOSFET for their applications.

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