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AO4435L

Part No AO4435L
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog FETs - Single
Description MOSFET P-CH 30V 10.5A 8SOIC
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Reel
Part Status Last Time Buy
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 10.5A
Drive Voltage (Max Rds On, Min Rds On) 5V, 20V
Rds On (Maximum) at Id, Vgs 14mOhm at 11A, 20V
Gate Source Voltage(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 24nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 1400pF at 15V
Power Dissipation (Maximum) 3.1W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-SOIC
Manufacturer Package 8-SOIC
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 709465-AO4435L
Popularity Low
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AO4435L CAD Model

Description

The AO4435L is a P-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc.

  • Mounting Technology: SMD
  • Package: 8-SOIC
  • Drive Voltage (Rds On Max): 5V
  • Drive Voltage (Rds On Min): 20V
  • Operating Temperature Range: -55°C to 150°C
  • Power Dissipation: 3.1W
  • Vds - Drain-Source Breakdown Voltage: 30V
  • Id - Continuous Drain Current: 10.5A
  • Rds On (Maximum) @ Id, Vgs: 14mOhm @ 11A, 20V
  • Gate Source Voltage(th) (Maximum) @ Id: 3V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 24nC @ 10V
  • Gate Source Voltage (Maximum): ±25V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 1400pF @ 15V

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Pricing & Ordering

Quantity Unit Price Ext. Price
450+ $0.1294 $58.2300
1,090+ $0.1063 $115.8670
1,690+ $0.1028 $173.7320
2,330+ $0.0993 $231.3690
3,015+ $0.0959 $289.1385
4,000+ $0.0866 $346.4000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,600 pieces
MOQ: 450 pcs
Order Increment : 1 pcs
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Shipping Information

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