The AP98T03GP is a P-channel enhancement mode power MOSFET from Advanced Power Electronics Corp (APEC). This MOSFET is designed for applications requiring efficient power switching, such as load switching, power management, and DC-DC converters. Its low on-resistance minimizes power losses, contributing to improved system efficiency.

Applications

• Load Switching
• Power Management in Portable Devices
• DC-DC Converters
• Battery Management Systems
• Solid State Relays

Features

• P-Channel Enhancement Mode: Simplifies gate drive circuitry.
• Low On-Resistance (RDS(on)): Minimizes power losses and improves efficiency.
• Low Gate Charge: Reduces switching losses.
• Fast Switching Speed: Enables high-frequency operation.
• RoHS Compliant: Environmentally friendly.

Benefits

• Increased Efficiency: Low RDS(on) reduces power dissipation, leading to higher efficiency in power conversion applications.
• Simplified Design: P-channel operation simplifies gate drive requirements.
• Reduced Switching Losses: Low gate charge minimizes switching losses, allowing for higher frequency operation.
• Environmentally Friendly: RoHS compliance ensures adherence to environmental regulations.

Technical Specifications

• Manufacturer: Advanced Power Electronics Corp. (APEC)
• Part Number: AP98T03GP
• Channel Type: P-Channel
• Maximum Drain-Source Voltage (VDS): -30V (Typical Value - Please Confirm with Datasheet)
• Gate-Source Voltage (VGS): ±20V (Typical Value - Please Confirm with Datasheet)
• Continuous Drain Current (ID): -10A (Typical Value - Please Confirm with Datasheet)
• On-Resistance (RDS(on)): Requires consulting the datasheet for the specific RDS(on) value at a given VGS and ID.
• Gate Charge (Qg): Requires consulting the datasheet for the typical gate charge value.
• Package: TO-252 (DPAK)

Note: For accurate and specific values for VDS, VGS, ID, RDS(on), and Qg, please refer to the official datasheet provided by Advanced Power Electronics Corp.