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Same model may have multiple batches, images only for reference.
AMC2M0080120D Advanced Power Electronics Corp. – Price, Stock & Datasheet
Same model may have multiple batches, images only for reference.

AMC2M0080120D

Part No AMC2M0080120D
Manufacturer Advanced Power Electronics Corp.
Catalog FETs - Single
Description SICFET N-CH 1200V 36A TO247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Package Bulk
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1.2 kV
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 50 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1461 pF @ 6.5 V
Power Dissipation (Max) 200W (Tc)
Operating Temperature -55°C ~ 155°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3
Ultra Librarian 3D Model Ultra Librarian AMC2M0080120D CAD Model

Description

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