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ZXMN6A11G

Part No ZXMN6A11G
Manufacturer Zetex Semiconductors
Catalog Electronic Wholesale
Description 60V N-CHANNEL ENHANCEMENT MODE MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer Zetex Semiconductors
Win Source Part Number 1283470-ZXMN6A11G
Manufacturer Homepage www.diodes.com/
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZXMN6A11G CAD Model

Description

The ZXMN6A11G is a 60V N-Channel Enhancement Mode MOSFET from Zetex Semiconductors (now Diodes Incorporated), designed for efficient power management and switching applications. This MOSFET is characterized by its low on-resistance and fast switching speed, making it suitable for a wide range of applications.

Applications:

  • DC-DC Converters: Used in voltage regulation and power conversion circuits.
  • Load Switching: Efficiently switches power to various loads in electronic systems.
  • Power Management: Optimizes power usage in portable devices and other battery-powered applications.
  • Motor Control: Controls small DC motors in various applications.

Features:

  • Low On-Resistance (RDS(on)): Minimizes power loss and improves efficiency.
  • Fast Switching Speed: Reduces switching losses and enhances overall performance.
  • Logic Level Gate Drive: Allows direct control from microcontrollers and other logic devices.
  • Enhancement Mode: Requires a positive gate voltage to turn on, simplifying drive circuitry.
  • 60V Drain-Source Voltage (VDS): Suitable for applications with moderately high voltage requirements.

Benefits:

  • Improved Efficiency: Low RDS(on) reduces power dissipation, leading to higher efficiency.
  • Simplified Circuit Design: Logic level gate drive simplifies the interface with control circuits.
  • Reduced Heat Dissipation: Lower on-resistance results in less heat generation, improving reliability.
  • Compact Size: Allows for integration into space-constrained applications.
  • Reliable Performance: Designed for consistent and dependable operation in demanding environments.

Additional Details:

The ZXMN6A11G features a drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) of ±20V, and a continuous drain current (ID) of up to 3.8A. It is typically available in a SOT223 package, which provides good thermal performance. The low gate charge (Qg) contributes to its fast switching speed. This MOSFET is designed to be RoHS compliant, ensuring it meets environmental regulations.

Its combination of low on-resistance, fast switching speed, and logic-level gate drive makes the ZXMN6A11G an excellent choice for a variety of power management and switching applications where efficiency and performance are critical.

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Pricing & Ordering

Quantity Unit Price Ext. Price
205+ $0.2864 $58.7120
495+ $0.2345 $116.0775
765+ $0.2275 $174.0375
1,050+ $0.2206 $231.6300
1,360+ $0.2125 $289.0000
1,820+ $0.1906 $346.8920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,500 pieces
MOQ: 205 pcs
Order Increment : 1 pcs
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