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ZVN4306G

Part No ZVN4306G
Manufacturer Zetex Semiconductors
Catalog Electronic Wholesale
Description N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Sample
Rohs State rohs
ECAD Module
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Manufacturer Zetex Semiconductors
Win Source Part Number 1283328-ZVN4306G
Manufacturer Homepage www.diodes.com/
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZVN4306G CAD Model

Description

The ZVN4306G is a 60V N-channel enhancement mode MOSFET manufactured by Zetex Semiconductors (now Diodes Incorporated). It is designed for use in a variety of low-side switching applications requiring low on-resistance and efficient power handling. Its compact size and robust performance make it a suitable choice for various electronic designs.

Applications:

  • DC-DC Converters
  • Load Switching
  • Power Management
  • Motor Control
  • LED Lighting

Features:

  • N-Channel Enhancement Mode MOSFET
  • Low On-Resistance: Minimizes power losses and improves efficiency.
  • 60V Drain-Source Voltage: Suitable for a broad range of applications.
  • 3.4A Continuous Drain Current: Capable of handling moderate to high current loads.
  • SOT223 Package: Provides good thermal dissipation capabilities.
  • Fast Switching Speed: Enhances performance in high-frequency applications.
  • RoHS Compliant: Environmentally friendly and complies with industry standards.

Benefits:

  • High Efficiency: Low on-resistance reduces power dissipation, leading to improved overall system efficiency.
  • Compact and Robust: The SOT223 package allows for efficient heat dissipation in a small form factor.
  • Improved Thermal Performance: The SOT223 package enhances thermal performance.
  • Simplified Circuit Design: Easy to integrate into existing and new designs.
  • Reliable Operation: Designed for robust and reliable performance in demanding applications.

Technical Specifications:

  • Drain-Source Voltage (Vds): 60V
  • Gate-Source Voltage (Vgs): ±20V
  • Continuous Drain Current (Id): 3.4A
  • Pulsed Drain Current (Idm): 15A
  • On-Resistance (Rds(on)): 100 mΩ at Vgs=10V
  • Gate Threshold Voltage (Vgs(th)): 1V to 3V
  • Total Gate Charge (Qg): 6.4 nC
  • Operating and Storage Temperature Range: -55°C to +150°C

The ZVN4306G is a reliable and efficient MOSFET suitable for a wide range of applications. Its low on-resistance and compact SOT223 package make it an excellent choice for designs where efficiency and thermal performance are critical.

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