The ZRA400N801 is an 800V N-Channel enhancement mode MOSFET manufactured by Zetex Semiconductors (now part of Diodes Incorporated). It is designed for high-voltage, high-speed switching applications.

Applications

• High Voltage Power Supplies
• LED Lighting
• DC-DC Converters
• Motor Control
• Inverters

Features

• 800V Breakdown Voltage
• Low On-Resistance
• Fast Switching Speed
• Avalanche Rated
• RoHS Compliant

Benefits

• Enables efficient and reliable operation in high-voltage applications.
• Reduces power loss and heat generation due to low on-resistance.
• Improves switching performance with fast switching speed.
• Provides robustness in the event of voltage transients with avalanche rating.
• Environmentally friendly due to RoHS compliance.

Technical Specifications

The ZRA400N801 has a drain-source breakdown voltage of 800V and a continuous drain current rating of approximately 2.5A (depending on heatsinking). Its on-resistance (RDS(on)) is typically low, minimizing conduction losses. The device is avalanche rated, providing protection against voltage transients. The gate threshold voltage is typically around 3V. The operating junction temperature range is typically -55°C to +150°C. It is commonly available in a TO-252 package. This MOSFET is well-suited for applications where high voltage and fast switching are required.