The NCEP055N85D is an N-channel enhancement mode power MOSFET manufactured by Wuxi NCE Power Semiconductor. This MOSFET is designed for high-efficiency switching applications, offering a combination of low on-resistance and gate charge. It is particularly well-suited for synchronous rectification, DC-DC conversion, and motor control applications.

Applications

• Synchronous Rectification in Power Supplies
• DC-DC Converters
• Motor Control Circuits
• Battery Management Systems (BMS)
• Load Switching

Features

• Low RDS(on) for minimized conduction losses
• Low Gate Charge (Qg) for reduced switching losses
• High Avalanche Energy
• Fast Switching Speed
• Lead-Free and RoHS Compliant
• 100% UIS Tested

Benefits

• Improved Energy Efficiency
• Reduced Heat Dissipation
• Enhanced System Reliability
• Simplified Thermal Management
• Compact Design

Technical Specifications

The NCEP055N85D features a drain-source voltage (VDS) of 85V, suitable for various power supply applications. It has a continuous drain current (ID) capability of approximately 85A depending on the package and thermal management employed. The on-resistance (RDS(on)) is typically around 5.5 mΩ at a gate-source voltage (VGS) of 10V. The gate threshold voltage (VGS(th)) typically ranges from 2V to 4V. It is often available in a TO-252 (DPAK) package for good thermal dissipation. The operating temperature range is typically -55°C to +175°C. The low gate charge contributes to efficient switching at higher frequencies. Avalanche ruggedness is assured via 100% UIS testing.

The low on-resistance of the NCEP055N85D contributes to minimal conduction losses, thereby improving overall efficiency. The low gate charge reduces gate drive power requirements and minimizes switching losses. The high avalanche energy rating ensures robustness against voltage spikes and surges. This MOSFET offers a suitable solution for applications demanding high efficiency, reliability, and compact designs.