The NCE60H10 is an N-Channel enhancement mode power MOSFET produced by Wuxi NCE Power Semiconductor Co., Ltd. This MOSFET is designed for high efficiency and fast switching, making it suitable for a variety of power management applications.

Applications

• Synchronous Rectification in AC/DC and DC/DC converters
• Hard Switched and High Frequency Circuits
• Uninterruptible Power Supplies (UPS)
• Power Tool Applications
• Motor Control

Features

• Low On-Resistance: Reduces conduction losses, improving efficiency.
• Fast Switching Speed: Enables higher frequency operation, reducing the size of passive components.
• Low Gate Charge: Minimizes switching losses.
• Avalanche Ruggedness: Provides robustness against voltage transients.
• Simple Drive Requirement: Easier to implement in various circuits.
• RoHS Compliant: Environmentally friendly.

Benefits

• Increased Efficiency: Lower on-resistance minimizes power dissipation and improves overall efficiency of the system.
• Reduced System Size: Fast switching speeds allow for smaller and lighter passive components.
• Improved Thermal Performance: Lower losses lead to reduced heat generation, improving system reliability.
• Enhanced Reliability: Avalanche ruggedness provides protection against voltage spikes and transients.
• Simplified Design: Easy to drive, reducing complexity in circuit design.

Specifications

The NCE60H10 typically features a drain-source voltage (Vds) of 60V and a continuous drain current (Id) of up to 100A depending on the operating conditions. The on-resistance (Rds(on)) is very low, typically in the milliohm range, which minimizes conduction losses. It is typically available in a TO-220 or similar package. The gate threshold voltage is typically between 2V and 4V. Refer to the datasheet for complete specifications.