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Same model may have multiple batches, images only for reference.
NXPSC06650XQ
Same model may have multiple batches, images only for reference.

NXPSC06650XQ

Part No NXPSC06650XQ
Manufacturer WeEn Semiconductors
Catalog Diodes, Rectifiers - Single
Description DIODE SIL CARBIDE 650V 6A TO220F / Diode 650 V 6A Through Hole TO-220F
Datasheet
NXPSC06650XQ Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Mfr WeEn Semiconductors
Package Tube
Product Status Last Time Buy
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 6A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 6 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 200 µA @ 650 V
Capacitance @ Vr, F 190pF @ 1V, 1MHz
Mounting Type Through Hole
Package / Case TO-220-2 Full Pack, Isolated Tab
Supplier Device Package TO-220F
Operating Temperature - Junction 175°C (Max)
Base Product Number NXPSC
Standard Package 1,000 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 929560-NXPSC06650XQ
Ultra Librarian 3D Model Ultra Librarian NXPSC06650XQ CAD Model

Description

The NXPSC06650XQ is a silicon carbide (SiC) Schottky diode designed for high voltage applications.

  • Maximum Reverse Voltage: 650 V
  • Average Rectified Current: 6A
  • Forward Voltage: 1.7V @ 6A
  • Reverse Recovery Time: 0 ns
  • Package: TO-220-2 full pack, isolated tab
  • Mounting: Through-hole
  • Manufacturer: WeEn Semiconductors
  • Status: Last time buy
  • Maximum Junction Temperature: 175°C
  • Moisture Sensitivity Level: 1
  • ECCN: EAR99
  • HTSUS Code: 8541.10.0080

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