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Same model may have multiple batches, images only for reference.
NXPSC04650D6J Real Image
Same model may have multiple batches, images only for reference.

NXPSC04650D6J

Part No NXPSC04650D6J
Manufacturer WeEn Semiconductors
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTTKY 650V 4A DPAK / Diode Silicon Carbide Schottky 650 V 4A Surface Mount DPAK
Datasheet
NXPSC04650D6J Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr WeEn Semiconductors
Package Tape & Reel
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 4A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 4 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 170 µA @ 650 V
Capacitance @ Vr, F 130pF @ 1V, 1MHz
Mounting SMD (SMT)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Operating Temperature - Junction 175°C (Max)
Base Product Number NXPSC
ECCN EAR99
HTSUS 8541.10.0080
Other Names 1740-NXPSC04650D6JCT,NXPSC04650D6J-ND,1740-NXPSC04650D6JTR,934072078118,1740-NXPSC04650D6JDKR
Standard Package 2,500
Win Source Part Number 1112707-NXPSC04650D6J
Ultra Librarian 3D Model Ultra Librarian NXPSC04650D6J CAD Model

Description

The NXPSC04650D6J is a silicon carbide Schottky diode designed for use in discrete semiconductor products.

  • Maximum DC Reverse Voltage: 650 V
  • Average Rectified Current: 4 A
  • Forward Voltage: 1.7 V @ 4 A
  • Reverse Recovery Time: 0 ns
  • Current Reverse Leakage @ Vr: 170 μA @ 650 V
  • Capacitance: 130 pF @ 1 V and 1 MHz
  • Operating Temperature Range: Up to 175°C
  • Package Type: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supply: Tape and reel
  • Manufacturer: WeEn Semiconductors

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Quantity Unit Price Ext. Price
50+ $1.2691 $63.4550
115+ $1.0413 $119.7495
175+ $1.0089 $176.5575
240+ $0.9764 $234.3360
310+ $0.9438 $292.5780
410+ $0.8462 $346.9420
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