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Same model may have multiple batches, images only for reference.
NXPSC046506Q Real Image
Same model may have multiple batches, images only for reference.

NXPSC046506Q

Part No NXPSC046506Q
Manufacturer WeEn Semiconductors
Catalog Diodes, Rectifiers - Single
Description DIODE SIL CARB 650V 4A TO220AC / Diode 650 V 4A Through Hole TO-220AC
Datasheet
NXPSC046506Q Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Mfr WeEn Semiconductors
Package Tube
Product Status Last Time Buy
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 4A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 4 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 170 µA @ 650 V
Capacitance @ Vr, F 130pF @ 1V, 1MHz
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package TO-220AC
Operating Temperature - Junction 175°C (Max)
Base Product Number NXPSC
Standard Package 50 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 887976-NXPSC046506Q
Ultra Librarian 3D Model Ultra Librarian NXPSC046506Q CAD Model

Description

The NXPSC046506Q is a SiC (Silicon Carbide) Schottky diode from WeEn Semiconductors.

  • Maximum DC Reverse Voltage: 650 V
  • Average Rectified Current: 4A
  • Forward Voltage: 1.7 V @ 4 A
  • Reverse Leakage Current: 170 µA @ 650 V
  • Package: Through-hole TO-220-2
  • Last Time Buy: Yes
  • Standard Package: 50 pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.0926 $62.7780
70+ $1.7170 $120.1900
105+ $1.6634 $174.6570
145+ $1.6098 $233.4210
190+ $1.5560 $295.6400
250+ $1.3950 $348.7500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,630 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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