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Same model may have multiple batches, images only for reference.
VS-20WT04FN Real Image
Same model may have multiple batches, images only for reference.

VS-20WT04FN

Part No VS-20WT04FN
Manufacturer Vishay
Catalog Diodes, Rectifiers - Single
Description High Performance Schottky Generation 5.0, 20 A | DIODE SCHOTTKY 20A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Semiconductor Diodes Division
Packaging Tube
Status Obsolete
Diode Type Schottky
Voltage - DC Reverse (Vr) (Maximum) 45V
Current - Average Rectified (Io) 20A
Voltage - Forward (Vf) (Maximum) at If 610mV at 20A
Speed Fast Recovery = 200mA (Io)
Current - Reverse Leakage at Vr 100μA at 45V
Capacitance at Vr, F 1900pF at 5V, 1MHz
Mounting Style SMD
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-252, (D-Pak)
Operating Temperature - Junction -55°C ~ 175°C
Manufacturer Pack Quantity 75
MSL Level 1 (Unlimited)
Win Source Part Number 1279807-VS-20WT04FN
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian VS-20WT04FN CAD Model

Description

The Vishay Semiconductor Diodes Division electronic component is a Schottky diode that is designed for fast recovery. It has a current - average rectified (Io) of 20A and an operating temperature - junction of -55°C ~ 175°C.

  • Type: Schottky diode
  • Recovery: Fast
  • Current - Average Rectified (Io): 20A
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Category: Discrete Semiconductor Products
  • Supplier Device Package: TO-252, (D-Pak)
  • Status: Obsolete
  • Manufacturer Homepage: www.vishay.com
  • Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Voltage - DC Reverse (Vr) (Maximum): 45V
  • Popularity: Medium
  • Supply and Demand: Balanced
  • Manufacturer Pack Quantity: 75
  • MSL Level: 1 (Unlimited)
  • Voltage - Forward (Vf) (Maximum) @ If: 610mV @ 20A
  • Current - Reverse Leakage @ Vr: 100μA @ 45V
  • Capacitance @ Vr, F: 1900pF @ 5V, 1MHz

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