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Same model may have multiple batches, images only for reference.
VB20120C-E3/8W Real Image
Same model may have multiple batches, images only for reference.

VB20120C-E3/8W

Part No VB20120C-E3/8W
Manufacturer Vishay
Catalog Diodes, Rectifiers - Arrays
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A | DIODE ARRAY SCHOTTKY 120V TO263
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Semiconductor Diodes Division
Packaging Tape and Reel
Diode Configuration 1 Pair Common Cathode
Diode Type Schottky
Voltage - DC Reverse (Vr) (Maximum) 120V
Current - Average Rectified (Io) (per Diode) 10A
Voltage - Forward (Vf) (Maximum) at If 900mV at 10A
Speed Fast Recovery = 200mA (Io)
Current - Reverse Leakage at Vr 700μA at 120V
Operating Temperature - Junction -40°C ~ 150°C
Mounting Style SMD
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AB
Manufacturer Pack Quantity 800
MSL Level 1 (Unlimited)
Win Source Part Number 1279086-VB20120C-E3/8W
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian VB20120C-E3/8W CAD Model

Description

The Vishay Semiconductor Diodes Division VB20120C-E3/8W is a Schottky diode type with a maximum voltage of DC reverse (Vr) of 120V and a maximum voltage forward (Vf) of 900mV @ 10A.

  • Current Reverse Leakage: 700μA @ 120V
  • Operating Temperature Junction: -40°C to 150°C
  • Mounting: SMD
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Current Average Rectified (Io) (per diode): 10A
  • Speed: Fast recovery = 200mA (Io)
  • Supply and Demand: Balance

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Quantity Unit Price Ext. Price
40+ $1.4714 $58.8560
100+ $1.2074 $120.7400
150+ $1.1696 $175.4400
205+ $1.1319 $232.0395
265+ $1.0942 $289.9630
355+ $0.9810 $348.2550
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