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SUU50N06-07L

Part No SUU50N06-07L
Manufacturer Vishay
Catalog OEM Parts ( S )
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 965493-SUU50N06-07L
Categories OEM Parts( S )
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SUU50N06-07L CAD Model

Description

The SUU50N06-07L is an N-Channel power MOSFET from Vishay Siliconix, designed for high-efficiency switching applications. This MOSFET is engineered to provide low on-resistance (RDS(on)) and gate charge, resulting in reduced power dissipation and improved overall system efficiency. Its robust design and high avalanche energy capability make it a reliable choice for demanding power management systems.

Applications

  • Synchronous rectification in power supplies
  • DC-DC converters
  • Motor drives
  • Uninterruptible Power Supplies (UPS)
  • Battery management systems

Features

  • Low on-resistance (RDS(on)) for minimal conduction losses
  • Low gate charge (Qg) for efficient switching
  • High avalanche energy capability for robust operation
  • 100% Rg tested
  • Halogen-free according to IEC 61249-2-21 definition

Benefits

  • Increased energy efficiency due to reduced power losses
  • Improved system reliability with high avalanche ruggedness
  • Simplified thermal management resulting from low RDS(on)
  • Reduced component count because of efficient performance
  • Environmentally friendly due to halogen-free construction

Additional Details

The SUU50N06-07L comes in a robust surface-mount package, suitable for automated assembly and high-density board layouts. Key electrical characteristics include a drain-source voltage (VDS) rating suitable for 24V and 48V systems, a continuous drain current (ID) rating providing substantial headroom for demanding loads, and a gate threshold voltage (VGS(th)) compatible with standard logic-level drive signals. Vishay provides detailed datasheets that include comprehensive electrical characteristics, thermal performance data, and application guidelines, enabling designers to optimize the MOSFET's performance in their specific applications. The device's low RDS(on) minimizes conduction losses, which translates directly into higher efficiency and reduced heat generation. The fast switching speed and low gate charge contribute to reduced switching losses at high frequencies, making it well-suited for modern power supply designs. The 100% Rg tested feature ensures consistent performance across different devices.

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