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SQJ461EP-T2_GE3

Part No SQJ461EP-T2_GE3
Manufacturer Vishay
Catalog OEM Souring
Description MOSFET P-CH 60V 175C
Sample
Rohs State rohs
ECAD Module
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Category OEM Souring
Win Source Part Number 1463531-SQJ461EP-T2_GE3
Manufacturer Vishay
Package Tape & Reel (TR);Cut Tape (CT)
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 14.4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4710 pF @ 30 V
Power Dissipation (Max) 83W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Ultra Librarian 3D Model Ultra Librarian SQJ461EP-T2_GE3 CAD Model

Description

The SQJ461EP-T2_GE3 by Vishay is a state-of-the-art P-Channel MOSFET designed for advanced electronic systems, featuring a 60V operational voltage and the capability to withstand temperatures up to 175°C. This MOSFET is tailored for high-performance applications that require efficient power regulation, including automotive technologies, renewable energy systems, and power supply designs. Its high temperature tolerance ensures stability and reliability in environments where conventional MOSFETS might fail, making it a critical component for thermal management and safety in electronic circuits. With its high durability and enhanced performance characteristics, the SQJ461EP-T2_GE3 is engineered to provide cutting-edge solutions for contemporary power management problems, reflecting Vishay's commitment to innovating in the field of semiconductor technology.

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