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SIR688DP-T1-GE3 Real Image SIR688DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.
SIR688DP-T1-GE3 Real Image SIR688DP-T1-GE3 Real Image
SIR688DP-T1-GE3 Real Image SIR688DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIR688DP-T1-GE3

Part No SIR688DP-T1-GE3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET N-CH 60V 60A PPAK SO-8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 60A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 3.5mOhm at 20A, 10V
Gate Source Voltage(th) (Maximum) at Id 2.7V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 66nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 3105pF at 30V
Power Dissipation (Maximum) 5.4W, 83W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package PowerPAK SO-8
Manufacturer Package PowerPAK SO-8
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 726935-SIR688DP-T1-GE3
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIR688DP-T1-GE3 CAD Model

Description

The Vishay Siliconix 726935-SIR688DP-T1-GE3 is an N-channel MOSFET with a drive voltage of 4.5V and 10V.

  • Category: Discrete Semiconductor Products
  • Package: PowerPAK SO-8
  • Power Dissipation: 5.4W, 83W
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 60A
  • Maximum Rds on @ Id, Vgs: 3.5mOhm @ 20A, 10V
  • Gate-Source Voltage(th) @ Maximum Id: 2.7V @ 250μA
  • Gate Charge (Qg) @ Maximum Vgs: 66nC @ 10V
  • Gate-Source Voltage: ±20V
  • Input Capacitance (Ciss) @ Maximum Vds: 3105pF @ 30V
  • Supply and Demand: Balanced

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