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SIHS36N50D-E3

Part No SIHS36N50D-E3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET N-CH 500V 36A SUPER-247
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 36A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 130mOhm at 18A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 125nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 3233pF at 100V
Power Dissipation (Maximum) 446W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package SUPER-247 (TO-274AA)
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 500
MSL Level 1 (Unlimited)
Win Source Part Number 734380-SIHS36N50D-E3
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SIHS36N50D-E3 CAD Model

Description

The SIHS36N50D-E3 is a high-performance N-channel MOSFET manufactured by Vishay. This MOSFET is designed for a wide range of power switching applications, offering low on-resistance, fast switching speed, and high avalanche ruggedness. It is particularly well-suited for use in power supplies, motor control circuits, and other applications requiring efficient and reliable switching.

Applications

  • Power Supplies: Used in switching power supplies for computers, servers, and other electronic devices.
  • Motor Control: Employed in motor control circuits for industrial and automotive applications.
  • Inverters: Suitable for use in inverters for converting DC to AC power.
  • DC-DC Converters: Used in DC-DC converters for voltage regulation.
  • Lighting: Employed in LED lighting and other lighting applications.

Features

  • N-Channel MOSFET: Offers efficient switching performance.
  • Low On-Resistance (RDS(on)): Minimizes power loss and heat dissipation.
  • Fast Switching Speed: Enables high-frequency switching operation.
  • High Avalanche Ruggedness: Withstands high avalanche energy for reliable operation.
  • Lead-Free Package: Available in a lead-free package compliant with RoHS standards.
  • Halogen-Free: Compliant with halogen-free requirements.

Benefits

  • High Efficiency: Low on-resistance minimizes power loss and improves efficiency.
  • Fast Switching: Enables high-frequency operation for smaller and lighter designs.
  • Reliable Operation: High avalanche ruggedness ensures reliable performance in demanding applications.
  • Environmentally Friendly: Lead-free and halogen-free package options are available.
  • Easy to Use: Standard MOSFET gate drive requirements simplify circuit design.

Technical Specifications

The SIHS36N50D-E3 has a drain-source voltage (VDS) rating of 500V and a continuous drain current (ID) rating that depends on the specific operating conditions and package thermal resistance. The on-resistance (RDS(on)) is very low, minimizing conduction losses. The gate charge (Qg) is also low, enabling fast switching speeds. Detailed electrical, thermal, and mechanical specifications can be found in the official Vishay datasheet for the SIHS36N50D-E3.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $6.2562 $62.5620
23+ $5.1333 $118.0659
35+ $4.9730 $174.0550
48+ $4.8126 $231.0048
63+ $4.6521 $293.0823
84+ $4.1709 $350.3556
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,642 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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