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SI4712DY-T1-E3

Name: SI4712DY-T1-E3
Brand: Vishay
SKU: 322050
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	SI4712DY-T1-E3
Manufacturer	Vishay
Catalog	FETs - Single
Description	MOSFET N-CH 30V 14.6A 8SOIC
Datasheet	SI4712DY-T1-E3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay-Siliconix
Series	SkyFET, TrenchFET
Packaging	Reel(TR)
FET Type	MOSFET N-Channel, Metal Oxide
FET Feature	Standard
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	14.6A (Tc)
Rds On (Max) @ Id, Vgs	13 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) @ Vgs	28nC @ 10V
Input Capacitance (Ciss) @ Vds	1084pF @ 15V
Power - Max	5W
Operating Temperature Range	-55°C ~ 150°C (TJ)
Mounting Style	SMD/SMT
Package	8-SOIC (0.154", 3.90mm Width)
Manufacturer Device Package	8-SO
Win Source Part Number	189961-SI4712DY-T1-E3
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian SI4712DY-T1-E3 CAD Model

Alternative Products

Description

The Vishay-Siliconix SI4712DY-T1-E3 is an N-channel MOSFET designed for surface mount technology (SMT) mounting.

Drain to Source Voltage: 30V
Continuous Drain Current: 14.6A (Tc)
Maximum On Resistance: 13 mOhm @ 15A and 10V
Gate Threshold Voltage: 2.5V @ 1mA
Gate Charge: 28nC @ 10V
Input Capacitance: 1084pF @ 15V
Power: 5W
Temperature Rating: -55°C to 150°C
Package: 8-SOIC (0.154", 3.90mm Width)
Supply and Demand: Limited

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
45+	$1.3456	$60.5520
105+	$1.1042	$115.9410
165+	$1.0695	$176.4675
225+	$1.0349	$232.8525
290+	$1.0002	$290.0580
390+	$0.8974	$349.9860

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 7,500 pieces

MOQ: 45 pcs

Order Increment : 1 pcs

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