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SI4654DY-T1-E3-S

Name: SI4654DY-T1-E3-S
Brand: Vishay
SKU: 321990
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	SI4654DY-T1-E3-S
Manufacturer	Vishay
Catalog	FETs - Single
Description	MOSFET N-CH 25V 28.6A 8-SOIC
Datasheet	SI4654DY-T1-E3-S Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay-Siliconix
Series	TrenchFET
Packaging	Reel(TR)
FET Type	MOSFET N-Channel, Metal Oxide
FET Feature	Standard
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	28.6A (Tc)
Rds On (Max) @ Id, Vgs	4 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Gate Charge (Qg) @ Vgs	100nC @ 10V
Input Capacitance (Ciss) @ Vds	3770pF @ 15V
Power - Max	5.9W
Operating Temperature Range	-55°C ~ 150°C (TJ)
Mounting Style	SMD/SMT
Package	8-SOIC (0.154", 3.90mm Width)
Manufacturer Device Package	8-SO
Win Source Part Number	189934-SI4654DY-T1-E3-S
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian SI4654DY-T1-E3-S CAD Model

Alternative Products

Description

The SI4654DY-T1-E3-S is a N-Channel MOSFET transistor from Vishay-Siliconix's TrenchFET series.

Drain to source voltage: 25V
Continuous drain current: 28.6A (Tc)
Maximum on-state resistance: 4 mOhm @ 15A, 10V
Gate threshold voltage: 2.5V @ 250μA
Gate charge: 100nC @ 10V
Input capacitance: 3770pF @ 15V
Power rating: 5.9W
Type: Metal oxide semiconductor field-effect transistor (MOSFET)
Feature: Standard
Package: Reel
Case: 8-SOIC (0.154", 3.90mm Width)
Dimension: 8-SO

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
175+	$0.3361	$58.8175
420+	$0.2760	$115.9200
650+	$0.2680	$174.2000
895+	$0.2587	$231.5365
1,155+	$0.2506	$289.4430
1,550+	$0.2241	$347.3550

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 10,200 pieces

MOQ: 175 pcs

Order Increment : 1 pcs

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