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Same model may have multiple batches, images only for reference.
SI4501ADY-TI-E3 Vishay
Same model may have multiple batches, images only for reference.

SI4501ADY-TI-E3

Part No SI4501ADY-TI-E3
Manufacturer Vishay
Catalog FETs - Arrays
Description MOSFET N/P-CH 30V/8V 8-SOIC
Datasheet
SI4501ADY-TI-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Arrays
Manufacturer Vishay
Series TrenchFET
Packaging Reel(TR)
FET Type N and P-Channel, Common Drain
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V, 8V
Current - Continuous Drain (Id) @ 25°C 6.3A, 4.1A
Rds On (Max) @ Id, Vgs 18 mOhm @ 8.8A, 10V
Vgs(th) (Max) @ Id 1.8V @ 250μA
Gate Charge (Qg) @ Vgs 20nC @ 5V
Power - Max 1.3W
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style SMD/SMT
Package 8-SOIC (0.154", 3.90mm Width)
Manufacturer Device Package 8-SO
Win Source Part Number 189911-SI4501ADY-TI-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4501ADY-TI-E3 CAD Model

Description

The Vishay 189911-SI4501ADY-TI-E3 is a TrenchFET transistor that is ideal for use in various electronic applications.

  • Packaging: Reel (TR)
  • Mounting Style: SMD/SMT
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • FET Type: N and P-Channel, Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V, 8V
  • Current - Continuous Drain (Id) @ 25°C: 6.3A, 4.1A
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.8A, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250μA
  • Gate Charge (Qg) @ Vgs: 20nC @ 5V
  • Power - Max: 1.3W
  • Supply and Demand Status: Limited

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