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Same model may have multiple batches, images only for reference.
SI4418DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4418DY-T1-GE3

Part No SI4418DY-T1-GE3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET N-CH 200V 2.3A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 2.3A
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Maximum) at Id, Vgs 130mOhm at 3A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 30nC at 10V
Gate Source Voltage (Maximum) ±20V
Power Dissipation (Maximum) 1.5W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-SO
Manufacturer Package 8-SOIC
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 716190-SI4418DY-T1-GE3
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4418DY-T1-GE3 CAD Model

Description

The Vishay Siliconix SI4418DY-T1-GE3 is a MOSFET component that is designed for use in a variety of settings.

  • Category: Discrete Semiconductor Products
  • Popularity: Low
  • Drive Voltage: 6V and 10V
  • Drain-Source Breakdown Voltage: 200V
  • Package: 8-SOIC
  • Power Dissipation: 1.5W

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