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Same model may have multiple batches, images only for reference.
SI4168DY-T1-E3 Vishay
Same model may have multiple batches, images only for reference.

SI4168DY-T1-E3

Part No SI4168DY-T1-E3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET N-CH 30V 24A 8-SOIC
Datasheet
SI4168DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Manufacturer Vishay
Series TrenchFET
Packaging Reel(TR)
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Rds On (Max) @ Id, Vgs 5.7 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Gate Charge (Qg) @ Vgs 44nC @ 10V
Input Capacitance (Ciss) @ Vds 1720pF @ 15V
Power - Max 5.7W
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style SMD/SMT
Package 8-SOIC (0.154", 3.90mm Width)
Manufacturer Device Package 8-SO
Win Source Part Number 189833-SI4168DY-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4168DY-T1-E3 CAD Model

Description

The Vishay MOSFET N-Channel, Metal Oxide transistor is a high-performance device designed for use in a variety of applications.

  • Drain to Source Voltage: 30V
  • Continuous Drain Current: 24A
  • Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 20A, 10V
  • Gate Charge (Qg) @ Vgs: 44nC @ 10V
  • Package: 8-SOIC
  • Input Capacitance (Ciss) @ Vds: 1720pF @ 15V
  • FET Type: Standard
  • Vgs(th) (Max) @ Id: 3V @ 250μA
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Series: TrenchFET
  • Packaging: Reel

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