The Vishay TrenchFET series MOSFET N-Channel metal oxide transistor is a high-performance component designed for use in discrete semiconductor products.

• Maximum Drain to Source Voltage: 20V
• Continuous Drain Current: 6A @ 25°C
• Rds On (Max): 37 mOhm @ 5.8A, 4.5V
• Vgs(th) (Max): 1.8V @ 250μA
• Gate Charge (Qg): 20nC @ 10V
• Input Capacitance (Ciss): 640pF @ 10V
• Power Rating: 3.2W
• Packaging: SOT-23-6 Thin, TSOT-23-6
• Device Supply: reel(TR)
• Mounting Style: SMD/SMT
• Operating Temperature Range: -55°C ~ 150°C (TJ)
• FET Feature: Standard