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SI3433DV-T1-E3

Part No SI3433DV-T1-E3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Manufacturer Vishay
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 189787-SI3433DV-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI3433DV-T1-E3 CAD Model

Description

The SI3433DV-T1-E3 is a P-Channel 20 V (D-S) MOSFET from Vishay. This MOSFET is designed for use in a variety of power management applications, offering efficient switching performance and low on-resistance in a compact package. The -E3 suffix indicates that this part is RoHS compliant and halogen-free.

Applications:

  • Load Switching
  • Power Management in Portable Devices
  • DC-DC Conversion
  • Battery Management Systems

Features:

  • Low On-Resistance: Minimizes conduction losses, improving efficiency.
  • Low Threshold Voltage: Allows for use in low voltage applications.
  • Compact Footprint: Enables high density designs.
  • TrenchFET® Power MOSFET Technology: Provides excellent switching performance.
  • RoHS Compliant and Halogen-Free: Compliant with environmental standards.

Benefits:

  • Improved System Efficiency: Low on-resistance reduces power dissipation.
  • Extended Battery Life: Efficient switching minimizes energy waste in portable devices.
  • Reduced Board Space: Small footprint allows for compact designs.
  • Enhanced Thermal Performance: Efficient power dissipation prevents overheating.
  • Environmentally Friendly: RoHS compliant and Halogen-free construction minimizes environmental impact.

Technical Specifications:

The SI3433DV-T1-E3 has a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of ±12V. The typical on-resistance (RDS(on)) at VGS = -4.5V is typically around 28 mΩ, and at VGS = -2.5V, it is around 45 mΩ. The continuous drain current (ID) is -6.3A. The device is available in a PowerPAK® SC-70 package, ensuring efficient thermal management and compact size. It is designed to operate within a temperature range of -55°C to +150°C.

The TrenchFET® technology employed in the SI3433DV-T1-E3 optimizes the device for low on-resistance and fast switching speeds. This makes it suitable for high-frequency switching applications. The device’s low gate charge further contributes to its efficiency, reducing gate drive losses. The PowerPAK® SC-70 package is designed for surface mounting and enables efficient heat dissipation, ensuring reliable operation even at higher power levels.

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Pricing & Ordering

Quantity Unit Price Ext. Price
225+ $0.2610 $58.7250
540+ $0.2148 $115.9920
835+ $0.2079 $173.5965
1,150+ $0.2010 $231.1500
1,480+ $0.1952 $288.8960
1,990+ $0.1744 $347.0560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,700 pieces
MOQ: 225 pcs
Order Increment : 1 pcs
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