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Same model may have multiple batches, images only for reference.
SI1922EDH-T1-BE3 Vishay
Same model may have multiple batches, images only for reference.

SI1922EDH-T1-BE3

Part No SI1922EDH-T1-BE3
Manufacturer Vishay
Catalog FETs - Arrays
Description MOSFET 2N-CH 20V 1.3A SOT-363
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1.3A (Ta), 1.3A (Tc)
Rds On (Max) @ Id, Vgs 198mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 740mW (Ta), 1.25W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-70-6
Base Product Number SI1922
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1379765-SI1922EDH-T1-BE3
Ultra Librarian 3D Model Ultra Librarian SI1922EDH-T1-BE3 CAD Model

Description

The SI1922EDH-T1-BE3 is a dual N-Channel MOSFET array from Vishay Siliconix.

  • Series: TrenchFET
  • Package: 6-TSSOP, SC-88, SOT-363
  • Drain-to-Source Voltage: 20V
  • Continuous Drain Current: 1.3A
  • On-Resistance: 198mOhm @ 1A
  • Gate Threshold Voltage: 1V @ 250εA
  • Gate Charge: 2.5nC @ 8V
  • Mounting Type: Surface Mount
  • Power Dissipation: 740mW
  • REACH: Unaffected
  • ECCN: EAR99

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62+ $1.6239 $100.6818
96+ $1.5732 $151.0272
132+ $1.5224 $200.9568
170+ $1.4717 $250.1890
228+ $1.3195 $300.8460
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