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Same model may have multiple batches, images only for reference.
S1DHE3_A/I Real Image
Same model may have multiple batches, images only for reference.

S1DHE3_A/I

Part No S1DHE3_A/I
Manufacturer Vishay
Catalog Diodes, Rectifiers - Single
Datasheet
S1DHE3_A/I Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr Vishay General Semiconductor - Diodes Division
Series Automotive, AEC-Q101
Package Tape & Reel
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 1.8 µs
Current - Reverse Leakage @ Vr 1 µA @ 200 V
Capacitance @ Vr, F 12pF @ 4V, 1MHz
Mounting SMD (SMT)
Package / Case DO-214AC, SMA
Supplier Device Package DO-214AC (SMA)
Operating Temperature - Junction -55°C ~ 150°C
Base Product Number S1D
Other Names S1DHE3_A/I,S1DHE3_A/IGICT,S1DHE3_A/IGITR,S1DHE3_A/IGIDKR
Standard Package 7,500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 1281433-S1DHE3_A/I
Ultra Librarian 3D Model Ultra Librarian S1DHE3_A/I CAD Model

Description

The S1DHE3_A/I is a standard recovery diode designed for use in discrete semiconductor products.

  • Mounting Type: Surface Mount
  • Package/Case: DO-214AC, SMA
  • Maximum Voltage DC Reverse: 200V
  • Maximum Current Average Rectified: 1A
  • Maximum Forward Voltage: 1.1V @ 1A
  • Maximum Reverse Recovery Time: 1.8μs
  • Maximum Capacitance: 12pF @ 4V, 1MHz
  • Operating Temperature: -55°C to 150°C
  • Manufacturer: Vishay General Semiconductor - Diodes Division

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