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IRFR9210TRLPBF

Part No IRFR9210TRLPBF
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET P-CH 200V 1.9A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tape and Reel
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 1.9A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 3Ohm at 1.1A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 8.9nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 170pF at 25V
Power Dissipation (Maximum) 2.5W, 25W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D-Pak
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Win Source Part Number 753746-IRFR9210TRLPBF
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR9210TRLPBF CAD Model

Description

The Vishay Siliconix IRFR9210TRLPBF is a MOSFET transistor with P-channel polarity.

  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Mounting Type: SMD
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Temperature Range: -55°C to 150°C
  • Power Dissipation (Maximum): 2.5W, 25W
  • Popularity: Low
  • Supply and Demand Status: Balanced
  • Manufacturer Pack Quantity: 3,000
  • MSL Level: 1 (Unlimited)
  • Vds - Drain-Source Breakdown Voltage: 200V
  • Id - Continuous Drain Current: 1.9A
  • Rds On (Maximum) @ Id, Vgs: 3Ohm @ 1.1A, 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 4V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 8.9nC @ 10V
  • Gate Source Voltage (Maximum): ±20V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 170pF @ 25V

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Shipping Information

Shipped from HK warehouse
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