The Vishay Siliconix MOSFET is a P-channel transistor with a drive voltage of 10V.

• It has a power dissipation of: 2.5W and 42W
• a Vds of: 100V
• With a continuous drain current of: 5.6A
• this component is designed for use in: discrete semiconductor products
• The device is housed in a: TO-252-3, DPak (2 Leads + Tab), SC-63 package, and is supplied in quantities of 3,000.
• The Vishay Siliconix MOSFET is mounted using: SMD technology and features a gate charge (Qg) of 18nC @ 10V
• The component is rated for use in a temperature range of: -55°C to 150°C and is obsolete.
• Alternative parts include: FQD8P10TM, IRFR9120TRPBF, and IRFR9120TRLPBF.