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Same model may have multiple batches, images only for reference.
IRFP26N60LPBF Real Image
Same model may have multiple batches, images only for reference.

IRFP26N60LPBF

Part No IRFP26N60LPBF
Manufacturer Vishay
Catalog FETs - Single
Description HEXFET Power MOSFET ( VDSS = 600V , RDS(on)typ. = 210mΩ , Trr typ. = 170ns , ID = 26A ) | MOSFET N-CH 600V 26A TO-247AC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 26A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 250mOhm at 16A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 180nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 5020pF at 25V
Power Dissipation (Maximum) 470W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247-3
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 25
MSL Level 1 (Unlimited)
Win Source Part Number 1187779-IRFP26N60LPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFP26N60LPBF CAD Model

Description

The IRFP26N60LPBF is a MOSFET transistor manufactured by Vishay Siliconix. This N-channel device has a Vds of 600V and can continuously drain a current of 26A. The IRFP26N60LPBF is a MOSFET transistor manufactured by Vishay Siliconix. This N-channel device has a Vds of 600V and can continuously drain a current of 26A.

  • Vds: 600V
  • Continuous drain current: 26A
  • Maximum Rds On: 250mOhm @ 16A and 10V
  • Package: TO-247-3
  • Operating temperature range: -55°C to 150°C
  • Maximum power dissipation: 470W
  • Gate charge: 180nC @ 10V
  • Packaging: tube
  • Pieces per package: 25

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290+ $1.0483 $304.0070
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