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IRFIBE30G

Part No IRFIBE30G
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=2.1A) | MOSFET N-CH 800V 2.1A TO220FP
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 800V
Id - Continuous Drain Current 2.1A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 3Ohm at 1.3A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 78nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1300pF at 25V
Power Dissipation (Maximum) 35W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220-3
Manufacturer Package TO-220-3 Full Pack, Isolated Tab
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187697-IRFIBE30G
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFIBE30G CAD Model

Description

The supply and demand status is limited.

  • Technology: MOSFET
  • Transistor Polarity: N-channel
  • Supplier Device Package: TO-220-3
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Operating Temperature Range: -55°C to 150°C
  • Power Dissipation (Maximum): 35W

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1102 $61.0610
130+ $0.9110 $118.4300
200+ $0.8826 $176.5200
275+ $0.8540 $234.8500
350+ $0.8256 $288.9600
470+ $0.7401 $347.8470
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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