The Vishay Siliconix MOSFET is a high-quality through-hole component that is perfect for use in a variety of electronic devices.

• Maximum Drain-Source Breakdown Voltage: 600V
• Continuous Drain Current: 2.5A
• Rds On (Maximum) @ Id, Vgs: 2.2Ohm @ 1.5A, 10V
• Gate Charge (Qg) (Maximum) @ Vgs: 31nC @ 10V
• Gate Source Voltage(th) (Maximum) @ Id: 4V @ 250μA
• Input Capacitance (Ciss) (Maximum) @ Vds: 660pF @ 25V
• Transistor Type: N-channel
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Package: TO-220-3 case
• Operating Temperature Range: -55°C to 150°C
• Supply and Demand Status: Sufficient