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IRF9Z14S

Part No IRF9Z14S
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) | MOSFET P-CH 60V 6.7A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 6.7A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 500mOhm at 4A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 12nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 270pF at 25V
Power Dissipation (Maximum) 3.7W, 43W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187469-IRF9Z14S
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF9Z14S CAD Model

Description

The Vishay Siliconix IRF9Z14S is a P-channel MOSFET transistor that is designed for use in discrete semiconductor products. Bold text The product is from Vishay Siliconix.

  • Package: D2PAK
  • Leads: 2 + Tab
  • Power Dissipation: 3.7W
  • Vds: 60V
  • Id: 6.7A
  • Rds On: 500mOhm @ 4A and 10V
  • Gate Source Voltage(th): 4V @ 250μA
  • Gate Charge (Qg): 12nC @ 10V
  • Input Capacitance (Ciss): 270pF @ 25V
  • Drive Voltage: 10V
  • Temperature Range: -55°C to 175°C
  • Status: Obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3928 $55.7120
90+ $1.1429 $102.8610
140+ $1.1071 $154.9940
190+ $1.0714 $203.5660
245+ $1.0357 $253.7465
325+ $0.9286 $301.7950
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,432 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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