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Same model may have multiple batches, images only for reference.
19MT050XF
Same model may have multiple batches, images only for reference.

19MT050XF

Part No 19MT050XF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 4N-CH 500V 31A MTP / Mosfet Array 4 N-Channel (Half Bridge) 500V 31A 1140W Chassis Mount 16-MTP
Datasheet
19MT050XF Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay General Semiconductor - Diodes Division
Series HEXFET®
Package Bulk
Product Status Obsolete
FET Type 4 N-Channel (Half Bridge)
FET Feature Standard
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 31A
Rds On (Max) @ Id, Vgs 220mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 7210pF @ 25V
Power - Max 1140W
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case 16-MTP Module
Supplier Device Package 16-MTP
Base Product Number 19MT050
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names *19MT050XF
Standard Package 15
Win Source Part Number 1034754-19MT050XF
Ultra Librarian 3D Model Ultra Librarian 19MT050XF CAD Model

Description

The HEXFET® 4 N-Channel (Half Bridge) MOSFET array is a bulk-packaged electronic component from Vishay General Semiconductor - Diodes Division.

  • Vdss: 500V
  • Id: 31A @ 25°C
  • Rds On (Max) @ Id, Vgs: 220mOhm @ 19A, 10V
  • Qg @ Vgs: 160nC @ 10V
  • Ciss (Max) @ Vds: 7210pF @ 25V
  • Operating Temperature Range: -40°C to 150°C (TJ)
  • Package: 16-MTP
  • Supplier Device Package: 16-MTP
  • Status: Obsolete
  • RoHS Compliant: No

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