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ME20N10

Part No ME20N10
Manufacturer VBsemi
Catalog OEM Parts (M - N)
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 965439-ME20N10
Categories OEM Parts(M-N)
Manufacturer VBsemi
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian ME20N10 CAD Model

Description

The ME20N10 is an N-Channel enhancement mode Power MOSFET manufactured by VBsemi. It is designed for low voltage, high current switching applications and offers good performance and efficiency.

Applications

  • DC-DC converters: Used in DC-DC converters for voltage regulation in portable devices and power supplies.
  • Load switching: Switching various loads in electronic circuits.
  • Power management: Employed in power management circuits for efficient power control.
  • Battery management systems (BMS): Used for switching and controlling charging and discharging of batteries.
  • Motor control: Suitable for controlling small DC motors.

Features

  • Low on-resistance (RDS(on)): Minimizes power loss and heat dissipation during conduction.
  • Low gate threshold voltage (VGS(th)): Allows for easy driving with low voltage logic.
  • Fast switching speed: Provides quick turn-on and turn-off times.
  • Surface mount package: Suitable for automated assembly and high-density circuit boards.
  • RoHS compliant: Compliant with RoHS standards for environmental protection.

Benefits

  • Improved efficiency: Reduces power loss and heat generation, leading to more efficient operation.
  • Simplified driving: Can be driven directly by low voltage logic signals.
  • Faster response: Enables fast switching speeds for high-frequency applications.
  • Reduced size: Allows for compact circuit designs due to its surface mount package.
  • Environmentally friendly: Complies with RoHS standards.

Additional Details

The ME20N10 typically has a drain-source voltage rating of 100V. The VBsemi datasheet will provide specific details regarding the on-resistance, gate threshold voltage, maximum drain current, and power dissipation. It is commonly available in a surface mount package such as TO-252 or similar. Important parameters to consult in the datasheet include gate charge (Qg), input capacitance (Ciss), and output capacitance (Coss) for proper design. It is crucial to verify VBsemi as the primary manufacturer and confirm availability. Proper gate drive is important for optimal performance.

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