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UT50N03G-TN3-R

Part No UT50N03G-TN3-R
Manufacturer UTC
Catalog Electronic Wholesale
Description 45A, 25V N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer UTC
Win Source Part Number 1278555-UT50N03G-TN3-R
Manufacturer Homepage www.utc-ic.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UT50N03G-TN3-R CAD Model

Description

The UTC UT50N03G-TN3-R is an N-channel enhancement-mode power MOSFET. It is designed for high-efficiency switching applications, offering a low on-resistance and fast switching speeds. This MOSFET is suitable for a variety of power management and control circuits.

Applications:

  • DC-DC converters
  • Power management in portable devices
  • Motor control
  • Load switching
  • LED lighting

Features:

  • Drain-Source Voltage (VDSS): 30V
  • Gate-Source Voltage (VGSS): ±20V
  • Continuous Drain Current (ID): 50A
  • On-Resistance (RDS(on)): 8.5mΩ (typical) at VGS = 10V
  • Fast Switching Speed
  • Low Gate Charge
  • Lead-Free / RoHS Compliant
  • Package: TO-252

Benefits:

  • High Efficiency: Low on-resistance minimizes power losses in switching applications.
  • Fast Switching: Reduces switching losses and improves overall system efficiency.
  • High Current Capability: Supports high current loads in demanding applications.
  • RoHS Compliance: Ensures environmental friendliness.
  • Ease of Use: Standard TO-252 package simplifies board layout and assembly.

Additional Details:

The UT50N03G-TN3-R Power MOSFET boasts a low on-resistance, contributing to reduced power dissipation and enhanced efficiency in power switching circuits. Its fast switching speed further minimizes losses during switching transitions, crucial for high-frequency applications. The device's ability to handle continuous drain currents of up to 50A makes it suitable for driving substantial loads. The TO-252 package offers efficient heat dissipation and is compatible with standard surface-mount assembly processes. The MOSFET’s low gate charge improves switching performance and reduces gate drive requirements. The device is lead-free and RoHS compliant, aligning with environmental regulations. It is often used in synchronous rectification, battery management, and power supplies where efficiency is paramount. Its robust design and electrical characteristics make it a reliable choice for a wide range of power electronic applications. The MOSFET is designed to withstand high operating temperatures, enhancing its reliability in demanding environments. Proper thermal management is essential to maintain performance and longevity at higher current levels.

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