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UT4957G-S08-R

Part No UT4957G-S08-R
Manufacturer UTC
Catalog Electronic Wholesale
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer UTC
Win Source Part Number 1278548-UT4957G-S08-R
Manufacturer Homepage www.utc-ic.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian UT4957G-S08-R CAD Model

Description

The UT4957G-S08-R is a P-Channel Enhancement Mode Power MOSFET manufactured by Unisonic Technologies Co., Ltd. (UTC). It is designed for applications requiring efficient power switching, low on-resistance, and compact size. This MOSFET is commonly used in load switching, power management, and DC-DC converters.

Applications:

  • Load Switching: Used to control power to various loads in electronic systems.
  • Power Management: Integrated into power management circuits for efficient voltage regulation.
  • DC-DC Converters: Used in DC-DC converters to step up or step down voltage levels.
  • Battery Management Systems: Used for charge and discharge control in battery-powered devices.
  • LED Lighting: Used in LED driver circuits for efficient current control.

Features:

  • Low On-Resistance (RDS(on)): Minimizes power loss and improves efficiency.
  • High Drain Current (ID): Capable of handling significant current levels.
  • Logic Level Gate Drive: Allows direct interfacing with logic circuits.
  • Fast Switching Speed: Enables efficient switching performance.
  • Small Surface Mount Package (SOT-23-3): Provides a compact solution for space-constrained applications.

Benefits:

  • Improved Efficiency: Low on-resistance contributes to higher energy efficiency in power conversion circuits.
  • Reduced Power Dissipation: Minimizes heat generation, enhancing system reliability.
  • Simplified Circuit Design: Logic-level gate drive simplifies integration into digital control systems.
  • Compact Solution: Small package size allows for dense board layouts.
  • Enhanced Thermal Performance: Provides good thermal characteristics for efficient heat dissipation.

The UT4957G-S08-R MOSFET's key electrical characteristics include drain-source voltage (VDS), gate-source voltage (VGS), continuous drain current (ID), and on-resistance (RDS(on)). It's critical to consult the manufacturer's datasheet for the most accurate and up-to-date specifications, including thermal characteristics and safe operating area (SOA) information. Proper thermal management, including the use of appropriate PCB layout and heat sinking techniques, may be necessary to ensure reliable operation at high current levels.

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