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UT2304G-AE3-R

Part No UT2304G-AE3-R
Manufacturer UTC
Catalog Electronic Wholesale
Description N-CHANNEL ENHANCEMENT MODE
Sample
Rohs State rohs
ECAD Module
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Manufacturer UTC
Win Source Part Number 1278395-UT2304G-AE3-R
Manufacturer Homepage www.utc-ic.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian UT2304G-AE3-R CAD Model

Description

The UT2304G-AE3-R is an N-Channel enhancement mode power MOSFET from UTC (Unisonic Technologies Co., Ltd.). It is designed for load switch and DC-DC converter applications where high efficiency and low on-resistance are crucial.

Applications:

  • Load Switching: Used as a high-side or low-side switch for controlling various loads.
  • DC-DC Converters: Employed in synchronous rectification and other DC-DC conversion topologies.
  • Power Management: Integrated into power management circuits for efficient power distribution.
  • Battery Management Systems (BMS): Used in battery charging and discharging control.
  • Portable Devices: Found in smartphones, tablets, and other portable electronics.

Features:

  • N-Channel MOSFET: Suitable for diverse switching applications.
  • Low On-Resistance (RDS(on)): Minimizes conduction losses and improves efficiency.
  • Fast Switching Speed: Enables efficient operation at higher switching frequencies.
  • Logic Level Gate Drive: Allows direct interfacing with low-voltage logic circuits.
  • Surface Mount Package: Available in a compact surface-mount package for space-saving designs.

Benefits:

  • High Efficiency: Low on-resistance reduces power dissipation, resulting in higher efficiency.
  • Compact Design: Small package size allows for high-density board layouts.
  • Simplified Circuit Design: Logic-level gate drive simplifies interfacing with control circuitry.
  • Improved Thermal Performance: Low RDS(on) reduces heat generation.
  • Enhanced Reliability: Designed for stable and consistent operation.

Technical Specifications:

The UT2304G-AE3-R typically features a drain-source voltage (VDS) of 30V, a continuous drain current (ID) of approximately 4.8A, and a gate-source voltage (VGS) of ±20V. The on-resistance (RDS(on)) is typically very low, in the milliohm range, depending on the gate-source voltage applied. It's commonly available in a surface-mount package such as a SOT-23 or similar. The datasheet from UTC should be consulted for specific RDS(on) values at different VGS and ID conditions, as well as thermal characteristics and power dissipation limits.

This MOSFET from UTC offers a good balance of performance and size, making it well-suited for a wide range of power management and switching applications, especially in portable electronics.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,015+ $0.0571 $57.9565
2,465+ $0.0469 $115.6085
3,820+ $0.0454 $173.4280
5,265+ $0.0439 $231.1335
6,795+ $0.0425 $288.7875
9,095+ $0.0381 $346.5195
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,099 pieces
MOQ: 1015 pcs
Order Increment : 1 pcs
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