The HE8050G-D-AE3-R is a silicon NPN epitaxial planar transistor designed for use in driver stages of audio amplifiers and for general purpose switching applications.

Applications

• Audio amplifier driver stages
• General purpose switching circuits
• Medium power linear and switching applications
• Consumer electronics

Features

• High Collector Current (Ic = 1.5A)
• Low Saturation Voltage
• High Current Gain (hFE)
• Epitaxial planar structure
• RoHS compliant

Benefits

• Excellent amplification characteristics in audio amplifier circuits due to high current gain.
• Efficient switching performance because of the low saturation voltage.
• Suitable for a wide range of applications requiring moderate current and voltage handling.
• Reliable performance due to the robust epitaxial planar construction.
• Environmentally friendly due to RoHS compliance.

Additional Details

The HE8050G-D-AE3-R is a versatile transistor suitable for a variety of applications. Its high collector current capability makes it ideal for driving larger loads, while its low saturation voltage minimizes power dissipation during switching. The component is commonly found in audio amplifiers and power supplies. It is housed in a standard TO-92 package for easy integration into circuit boards. The 'G' suffix indicates that the part is halogen-free.

Electrical Characteristics:

• Collector-Base Voltage (VCBO): 60V
• Collector-Emitter Voltage (VCEO): 25V
• Emitter-Base Voltage (VEBO): 5V
• Collector Current (IC): 1.5A
• Collector Dissipation (PC): 1W
• Operating and Storage Junction Temperature Range: -55°C to +150°C