The 2SD882SSL-E-AE3-R is a silicon NPN epitaxial planar transistor manufactured by UTC (Unisonic Technologies Co., Ltd.). It is designed for use in various switching and amplification applications, particularly in consumer electronics and industrial equipment.
Applications
- Power Amplification
- Switching Circuits
- Motor Control
- DC-DC Converters
- General Purpose Amplification
Features
- High Collector Current (Ic = 3A)
- Low Saturation Voltage (VCE(sat))
- High Collector-Emitter Voltage (VCEO = 60V)
- Fast Switching Speed
- RoHS Compliant
Benefits
- Efficient Power Amplification: The high collector current allows for efficient amplification of signals, reducing power loss and improving overall system performance.
- Reduced Power Dissipation: The low saturation voltage minimizes power dissipation in switching applications, resulting in cooler operation and increased reliability.
- Versatile Application: Suitable for a wide range of applications due to its robust electrical characteristics.
- Reliable Performance: The high voltage and current ratings ensure reliable performance in demanding environments.
- Environmentally Friendly: RoHS compliance ensures that the device meets environmental standards, reducing the impact on the environment.
Additional Details
The 2SD882SSL-E-AE3-R is typically supplied in a SOT-89 package. Key electrical characteristics include a collector-base voltage (VCBO) of 70V, a collector-emitter voltage (VCEO) of 60V, and an emitter-base voltage (VEBO) of 7V. The continuous collector current (IC) is rated at 3A, and the peak collector current (ICM) can reach up to 6A. The transistor has a total power dissipation (PD) of 1.25W. The DC current gain (hFE) ranges from 60 to 200, which ensures sufficient amplification in various circuit configurations. Its transition frequency is around 100MHz, making it suitable for relatively high-speed switching applications. It is designed to operate within a temperature range of -55°C to +150°C.
