The TGA2590-CP is a high-power GaN MMIC amplifier manufactured by TriQuint Semiconductor (now Qorvo). It is designed for radar, communications, and electronic warfare applications, providing high gain and high power output in the Ku-band frequency range.

Applications:

• Radar systems: For transmitting and receiving radar signals.
• Satellite communications: As a power amplifier in satellite uplinks.
• Electronic warfare (EW): For jamming and countermeasures applications.
• Test and measurement equipment: As a gain block in signal generators and spectrum analyzers.

Features:

• Frequency range: Operates from 13 to 17 GHz.
• High output power: Provides a typical output power of 8W (39 dBm).
• High gain: Typical gain of 23 dB.
• High power-added efficiency (PAE): Typically 30%.
• Small signal gain: Flat gain response across the operating frequency band.
• Input and output matched to 50 ohms: Simplifies integration into RF systems.
• DC grounded gate and source: Provides ESD protection.

Benefits:

• Increased system performance: High output power and gain improve signal strength and range.
• Efficient power amplification: High PAE reduces power consumption and heat dissipation.
• Simplified system design: Input and output matching simplifies integration.
• Reliable operation: Robust design ensures stable performance in demanding environments.

Technical Specifications:

The TGA2590-CP is typically packaged in a 24-lead, 5x5 mm QFN package. It requires a positive drain voltage (typically +28V) and a negative gate voltage. It is designed for operation over a temperature range of -40°C to +85°C. The device is fabricated using GaN-on-SiC technology, providing excellent thermal performance and reliability.