The TPCF8101(TE85L) is an N-channel Power MOSFET from Toshiba Semiconductor and Storage. It is designed to deliver high efficiency and reliability in power management applications. The device features a low drain-source on-resistance, enabling efficient power conversion with minimal losses.

Applications

• DC-DC Converters
• AC-DC Adapters
• Power Management in Portable Devices
• Motor Control Applications

Features

• N-Channel MOSFET
• Low Drain-Source On-Resistance (RDS(on))
• High-Speed Switching Capability
• Surface-Mount Package (TE85L)
• Lead-Free

Benefits

• Improved Power Efficiency
• Reduced Heat Dissipation
• Fast Switching for High-Frequency Applications
• Compact Design for Space-Constrained Systems
• Environmentally Friendly

Technical Specifications

The TPCF8101(TE85L) boasts a drain-source voltage (VDS) rating of 30V and a continuous drain current (ID) rating of 7.5A. The typical RDS(on) is 14 mΩ at VGS = 10V and 21 mΩ at VGS = 4.5V. The gate-source threshold voltage (VGS(th)) ranges from 1.0V to 2.5V. The device is available in a TE85L surface-mount package, making it suitable for automated assembly processes. It complies with RoHS standards.

The TPCF8101(TE85L) is optimized for high-performance power management systems. Its low on-resistance and rapid switching capabilities result in enhanced efficiency and reduced energy consumption. The compact TE85L package enables high-density designs, making it a great fit for modern portable devices and power supplies.