The TPCC8062-H is an N-channel power MOSFET manufactured by Toshiba Semiconductor and Storage. It is designed for high-efficiency power switching and is suitable for a variety of applications, including DC-DC converters, load switches, and motor control circuits. The device utilizes advanced trench MOS technology to minimize on-resistance and gate charge, contributing to reduced power loss and improved overall system efficiency.

Applications

• DC-DC converters
• Load switches in power distribution
• Motor control circuits
• LED lighting drivers
• Power management in portable devices

Features

• Low drain-source on-resistance (Rds(on)): Minimizes conduction losses for increased efficiency.
• Low gate charge (Qg): Reduces switching losses at high frequencies.
• Fast switching speed: Enables efficient operation in high-frequency applications.
• Avalanche rated: Enhances robustness and reliability under transient conditions.
• Surface-mount package: Facilitates compact design and automated assembly.

Benefits

• Increased energy efficiency: Reduced power losses contribute to lower operating costs and reduced heat generation.
• Improved thermal performance: Efficient heat dissipation enhances reliability and extends product lifespan.
• Simplified circuit design: Easy to implement in various power management applications.
• Enhanced system reliability: Robust design protects against voltage spikes and overloads.
• Compact solution: Surface-mount package enables smaller and more efficient designs.

Additional Details

The TPCC8062-H features a low on-resistance, ensuring minimal power dissipation during operation. The low gate charge enables faster switching speeds and reduced switching losses. Its avalanche rating provides added protection against voltage transients. The device is available in a surface-mount package, facilitating efficient PCB assembly. Detailed specifications, including voltage and current ratings, can be found in the official Toshiba datasheet. The typical operating temperature range is -55°C to +150°C. Its compliance with RoHS standards ensures it meets environmental regulatory requirements. Applications often include synchronous rectification and power factor correction circuits. The advanced trench MOS technology contributes to lower on-resistance, compared to traditional planar MOSFETs.