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TOSHIBA RN4901-TE85L

Part No TOSHIBA RN4901-TE85L
Manufacturer Toshiba Semiconductor and Storage
Catalog OEM Parts (T - Z)
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Win Source Part Number 1088736-TOSHIBA RN4901-TE85L
Categories OEM Parts(T-Z)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TOSHIBA RN4901-TE85L CAD Model

Description

The RN4901-TE85L is a P-channel MOSFET manufactured by Toshiba Semiconductor and Storage. It is designed for load switching and power management applications. This MOSFET features low on-resistance and high-speed switching capabilities, making it suitable for various electronic devices.

Applications

  • Load switches
  • Power management in portable devices
  • DC-DC converters
  • Motor control circuits

Features

  • Low drain-source on-resistance (RDS(ON))
  • High-speed switching
  • Enhancement mode
  • Surface mount package

Benefits

  • Reduced power loss due to low RDS(ON)
  • Improved energy efficiency
  • Compact size for high-density mounting
  • Simplified circuit design

Additional Details

The RN4901-TE85L P-channel MOSFET is characterized by its low drain-source on-resistance, which minimizes power dissipation and improves overall energy efficiency. This is crucial in battery-powered devices where extending battery life is essential. The high-speed switching capability of the MOSFET allows for quick and efficient switching operations, which is important in applications such as DC-DC converters and motor control circuits.

The enhancement mode operation ensures that the MOSFET is normally off, preventing unwanted current flow when the gate voltage is zero. This is a desirable feature for safety and power saving purposes. The RN4901-TE85L is available in a surface mount package, which allows for high-density mounting on printed circuit boards. This helps reduce the overall size and weight of the electronic device.

The typical RDS(ON) value is around 0.2 ohms at a gate-source voltage (VGS) of -4.5V, and the drain current (ID) can reach up to -1A. The maximum gate-source voltage is ±20V, and the maximum drain-source voltage is -30V. The gate charge (Qg) is low, contributing to faster switching speeds and lower power dissipation. The operating temperature range is typically from -55°C to +150°C, making it suitable for a wide range of environmental conditions.

The RN4901-TE85L is specifically designed for use in portable devices, such as smartphones and tablets, where space is limited and energy efficiency is paramount. It is also used in power management circuits to regulate voltage and current levels, ensuring stable and reliable operation of the electronic device. The MOSFET is lead-free and RoHS compliant, making it environmentally friendly.

Overall, the RN4901-TE85L from Toshiba Semiconductor and Storage is a versatile and efficient P-channel MOSFET that is suitable for a wide range of applications requiring low on-resistance and high-speed switching. Its compact size and reliable performance make it a valuable component in modern electronic designs.

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