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Same model may have multiple batches, images only for reference.
TK7J90E,S1E
Same model may have multiple batches, images only for reference.

TK7J90E,S1E

Part No TK7J90E,S1E
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors – FETs, MOSFETs – Single
Description MOSFET N-CH 900V 7A TO3P
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 700µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 25 V
Power Dissipation (Max) 200W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P(N)
Case / Package TO-3P-3, SC-65-3
Package Tube
Supply and Demand Status Shortage
Win Source Part Number 1495185-TK7J90E,S1E
Ultra Librarian 3D Model Ultra Librarian TK7J90E,S1E CAD Model

Description

N

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