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TK7A65U

Part No TK7A65U
Manufacturer Toshiba Semiconductor and Storage
Catalog Misc Products
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Manufacturer Toshiba Semiconductor and Storage
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 840419-TK7A65U
Ultra Librarian 3D Model Ultra Librarian TK7A65U CAD Model

Description

The TK7A65U is a 650V N-channel power MOSFET from Toshiba Semiconductor and Storage. This MOSFET is designed for high-efficiency power switching applications, featuring low on-resistance and fast switching speeds. It is part of Toshiba's DTMOS series, known for its performance and reliability.

Applications

  • Power Supplies: Used in switch-mode power supplies (SMPS), AC-DC adapters, and auxiliary power supplies.
  • Lighting: Suitable for LED lighting drivers and electronic ballasts.
  • Motor Control: Employed in motor control circuits for appliances and industrial equipment.
  • DC-DC Converters: Used in DC-DC converters for voltage regulation.
  • Inverters: Found in solar inverters and uninterruptible power supplies (UPS).

Features

  • VDSS (Drain-Source Voltage): 650V
  • ID (Drain Current): 7A (continuous)
  • RDS(on) (Drain-Source On-Resistance): 1.15 Ohms (maximum) @ VGS = 10V
  • Gate Threshold Voltage (VGS(th)): 2.5V to 3.5V
  • Fast Switching Speed: Designed for minimal switching losses and improved efficiency.
  • Low On-Resistance: Minimizes conduction losses, contributing to high efficiency.
  • Avalanche Energy Rated: Provides robustness against voltage transients and spikes.
  • RoHS Compliant: Complies with environmental regulations.

Benefits

  • High Efficiency: Low RDS(on) and fast switching speeds result in efficient power conversion.
  • Reduced Power Loss: Minimizes heat generation, allowing for more compact designs and smaller heat sinks.
  • Improved Reliability: Avalanche energy rating provides protection against voltage transients, increasing overall system reliability.
  • Simplified Design: Easy integration into various power electronic circuits.
  • Enhanced Thermal Performance: Package designed for efficient heat dissipation.

Additional Details

The TK7A65U comes in a through-hole TO-220 package. The device's thermal resistance from junction to case (Rth(j-c)) is optimized for efficient heat transfer. The gate charge (Qg) is a key parameter for designing the gate drive circuit. Refer to the official Toshiba datasheet for detailed specifications, application notes, and recommended PCB layout guidelines to ensure optimal performance and long-term reliability in the intended application. Proper thermal management is crucial for maximizing the lifespan and performance of this MOSFET.

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