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Same model may have multiple batches, images only for reference.
TK6Q65W,S1Q Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK6Q65W,S1Q

Part No TK6Q65W,S1Q
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Single
Description MOSFET N-CH 650V 5.8A IPAK-OS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Toshiba Semiconductor and Storage
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) at 25°C 5.8A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.05Ohm at 2.9A, 10V
Vgs(th) (Maximum) at Id 3.5V at 180μA
Gate Charge (Qg) (Maximum) at Vgs 11nC at 10V
Maximum Vgs ±30V
Input Capacitance (Ciss) (Maximum) at Vds 390pF at 300V
Power Dissipation (Maximum) 60W (Tc)
Temperature Range - Operating 150°C
Mounting Style Through Hole
Supplier Device Package I-PAK
Manufacturer Package TO-251-3 Stub Leads, IPak
Manufacturer Pack Quantity 75
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 803707-TK6Q65W,S1Q
Ultra Librarian 3D Model Ultra Librarian TK6Q65W,S1Q CAD Model

Description

The TK6Q65W,S1Q MOSFET (Metal Oxide) electronic component manufactured by Toshiba Semiconductor and Storage.

  • FET Type: N-Channel
  • Drain to Source Voltage (Vdss): 650V
  • RoHS Compliant: Yes
  • Maximum Power Dissipation: 60W (Tc)
  • Temperature Range: -150°C
  • Package: Tube
  • Mounting: Through Hole
  • Supplier Device Package: I-PAK
  • Manufacturer Pack Quantity: 75
  • MSL Level: 1 (Unlimited)
  • Rds On (Maximum) @ Id, Vgs: 1.05Ohm @ 2.9A, 10V
  • Gate Charge (Qg) (Maximum) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 390pF @ 300V
  • Continuous Drain (Id) @ 25°C: 5.8A
  • Maximum Vgs: ±30V

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24+ $4.9238 $118.1712
37+ $4.7702 $176.4974
51+ $4.6165 $235.4415
65+ $4.4629 $290.0885
87+ $4.0009 $348.0783
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