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TK5B50D

Part No TK5B50D
Manufacturer Toshiba Semiconductor and Storage
Catalog Misc Products
Sample
Rohs State rohs
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Manufacturer Toshiba Semiconductor and Storage
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 840400-TK5B50D
Ultra Librarian 3D Model Ultra Librarian TK5B50D CAD Model

Description

The TK5B50D is a 500V N-channel power MOSFET from Toshiba Semiconductor and Storage. This MOSFET is designed for high-efficiency power switching applications, offering low on-resistance and fast switching speeds. It is part of Toshiba's DTMOS series, known for its superior performance and reliability.

Applications

  • Power Supplies: Used in various types of power supplies, including switch-mode power supplies (SMPS) and auxiliary power supplies.
  • Motor Control: Suitable for motor control circuits in appliances, industrial equipment, and automotive systems.
  • DC-DC Converters: Employed in DC-DC converters for voltage regulation in electronic devices.
  • Lighting Systems: Used in LED lighting drivers and electronic ballasts.
  • Inverters: Found in solar inverters, UPS (Uninterruptible Power Supply) systems, and other power inverter applications.

Features

  • VDSS (Drain-Source Voltage): 500V
  • ID (Drain Current): 5A (continuous)
  • RDS(on) (Drain-Source On-Resistance): 1.55 Ω (maximum) @ VGS = 10V
  • Gate Threshold Voltage (VGS(th)): 2.0V to 4.0V
  • Fast Switching Speed: Reduces switching losses and improves efficiency.
  • Low On-Resistance: Minimizes conduction losses.
  • Avalanche Energy Rated: Ensures robustness against voltage transients.
  • RoHS Compliant: Complies with environmental regulations.

Benefits

  • High Efficiency: Low on-resistance and fast switching contribute to higher efficiency in power conversion.
  • Reduced Power Loss: Minimizes heat generation, allowing for smaller heat sinks and more compact designs.
  • Improved Reliability: Avalanche energy rating provides added protection against voltage spikes.
  • Simplified Design: Easy to implement in various power electronic circuits.
  • Compact Size: Available in a through-hole package for easy mounting.

Additional Details

The TK5B50D is typically available in a TO-220SIS package. The device's thermal resistance from junction to case (Rth(j-c)) is typically around 3.85 °C/W, which helps in managing heat dissipation. The gate charge (Qg) is specified to help designers optimize gate drive circuitry. It is crucial to refer to the official Toshiba datasheet for detailed specifications and application guidelines to ensure optimal performance and reliability in the intended application.

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