The Toshiba Semiconductor and Storage MOSFET is a high-performance, N-channel transistor designed for use in discrete semiconductor products. It features a drive voltage of 10V, a maximum power dissipation of 45W, and a temperature range of -55°C to 150°C. The transistor is mounted through a hole and packaged in a TO-220SIS package. It has a Vds drain-source breakdown voltage of 600V and an Id continuous drain current of 25A. The Rds on (maximum) at Id, Vgs is 140mOhm @ 7.5A, 10V, and the gate charge (Qg) (maximum) at Vgs is 60nC @ 10V. The input capacitance (Ciss) (maximum) at Vds is 2400pF @ 300V. Its popularity is low in the market, and the supply and demand status is limited.

• Drive Voltage: 10V
• Maximum Power Dissipation: 45W
• Temperature Range: -55°C to 150°C
• Mounting Type: Through Hole
• Package: TO-220SIS
• Vds: 600V
• Id: 25A
• Rds on (maximum) at Id, Vgs: 140mOhm @ 7.5A, 10V
• Gate Charge (Qg) (maximum) at Vgs: 60nC @ 10V
• Input Capacitance (Ciss) (maximum) at Vds: 2400pF @ 300V