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TK16A60W5,S4VX

Part No TK16A60W5,S4VX
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 15.8A TO220SIS / N-Channel 600 V 15.8A (Ta) 40W (Tc) Through Hole TO-220SIS
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series DTMOSIV
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 15.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 7.9A, 10V
Vgs(th) (Max) @ Id 3.7V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 300 V
FET Feature Super Junction
Power Dissipation (Max) 40W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack
Base Product Number TK16A60
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names TK16A60W5S4VX
Standard Package 50
Win Source Part Number 1019253-TK16A60W5,S4VX
Ultra Librarian 3D Model Ultra Librarian TK16A60W5,S4VX CAD Model

Description

The TK16A60W5 is a high-quality N-channel MOSFET manufactured by Toshiba Semiconductor and Storage.

  • Channel Type: N-channel
  • Drain to Source Voltage (Vdss): 600 V
  • Current Rating: 15.8A (Ta)
  • FET Type: Super Junction
  • Maximum Rds On: 190mOhm @ 7.9A, 10V
  • Gate Charge (Qg): 43 nC @ 10 V
  • Input Capacitance (Ciss): 1350 pF @ 300 V
  • Package: TO-220-3 Full Pack
  • Temperature Range: 150°C (TJ)
  • Packaging: Tube

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